ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,790, issued on July 14, was assigned to GLOBALFOUNDRIES U.S. Inc (Malta, N.Y.). "Bipolar transistors" was invented by Alexander M. Derricks... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,792, issued on July 14, was assigned to Mitsubishi Electric Corp. (Tokyo). "Semiconductor device comprising a transistor region and a capac... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,794, issued on July 14, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan). "Semiconductor apparatus, and manufacturing method thereo... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,795, issued on July 14, was assigned to Imec vzw (Leuven, Belgium). "Method for forming a FET device" was invented by Boon Teik Chan (Wilse... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,796, issued on July 14, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "High electron mobility transistor and metho... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,797, issued on July 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan). "Isolation structures for transistor... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,798, issued on July 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor structure having diel... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,799, issued on July 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Multi-gate device fabrication a... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,800, issued on July 14, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China). "Enhancement-mode switching device and preparation metho... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,801, issued on July 14, was assigned to ROBERT BOSCH GMBH (Stuttgart, Germany). "Vertical field effect transistor including channel having ... Read More